Si875x 隔离式 FET 驱动器

Si8751/52 FET driver offer a simple way to replace solid-state relays (SSRs) or electromechanical relays (EMRs). Si875x devices combine robust CMOS isolation technology with a FET driver to form a complete, isolated switch. Versatile input options provide either digital CMOS pin control (Si8751) or diode emulation (Si8752) to best fit the application. Flexible outputs support driving AC or DC load configurations, and the self-contained device generates its own gate drive output voltage, reducing cost, size, and complexity. Si875x devices eliminate the need for bulky mechanical relays and allow self-selection for FET switches, so the design can be completely optimized for the application’s power, cost, and performance requirements. Unlike traditional SSRs, which integrate optocoupler-style LED inputs and limit the operating temperature range of the solution, Si875x drivers can support full industrial and automotive temperature ranges with increased stability and longer lifetime.

The Si875x drives FET gates with a nominal 10.3 V using as low as 1 mA input current, and its 2.5 kVrms isolation rating forms the basis for full certification to UL, CSA, VDE, and CQC. A unique power optimization option delivers maximum turn on current for fast speed, then lowers to static holding current once the optional external cap is discharged. 输入侧电压可灵活地在 2.25 V 至 5.5 V 之间变动,支持无缝连接至低功耗控制器。Si875x devices provide a clamping to prevent unintended turn on of the external FET when a high dV/dt is present on the FET’s drain.

Fast turn-off time
35 µs
Flexible input
digital or opto-emulator

Common Specs

  • 数字 CMOS 或二极管仿真控制输入
  • 开启时间 <100 µs 的 10.3 V 栅极驱动输出
  • 内部产生的次级侧电源
  • 米勒钳位电容支持以减少电感颤动
  • 直流或交流负载开关支持
  • 驱动用户选择的外部 FET
  • 2.5 kVrms 隔离额定值
  • UL、CSA、VDE 和 CQC 认证(待定)
  • 工业 -40 至 +105°C 或汽车 -40 至 125 °C 温度范围
  • 符合 RoHS 的 SOIC-8 封装
Find the Right Si875x Device Select Columns
Select Columns
零件号 隔离电压 (kVrms) 输入类型 峰值输出电流 最大传播延迟 (µs) 驱动器供电范围 (V) 封装类型 AEC-Q100 输入电源 (V) 驱动器供电功能 温度范围 (ºC) 10 Kv 浪涌 重叠保护和停滞时间控制
2.5 数字 CMOS 特定外部 FET 41 8 13 13 NB SOIC-8 2.25 5.5 8 13 13 -40 105
2.5 二极管仿真 特定外部 FET 41 8 13 13 NB SOIC-8 2.25 5.5 8 13 13 -40 105

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